doc. no : qw0905-la rev. : date : 27 - mar.- 2007 38b-86/eyg-pf a data sheet ligitek electronics co.,ltd. property of ligitek only led array la38b-86/eyg-pf pb lead-free parts
note : 1.all dimension are in millimeter tolerance is 0.25mm unless otherwise noted. 2.specifications are subject to change without notice. leyg3392-c3/np-pf part no. page la38b-86/eyg-pf 1/7 package dimensions ligitek electronics co.,ltd. property of ligitek only 7.6 8.6 1.anode orange 3.anode green 4.anode yellow 2.common cathode 25.0min 1.0min 1.0min 4-1.27typ 1.0min 0.5 typ 3 2 1 4 1.5max 5.9 5.0 25.0min 3 1 2 4 1.0min 1.0min 4-1.27typ 1.0min 0.5 typ 5.9 5.0 8.6 7.6 2.common cathode 4.anode yellow 3.anode green 1.anode orange 5.8 7.5 pdf created with pdffactory trial version www.pdffactory.com
note : 1.the forward voltage data did not including 0.1v testing tolerance. 2. the luminous intensity data did not including 15% testing tolerance. typical electrical & optical characteristics (ta=25 ) peak wave length pnm gap gaasp/gap la38b-86/eyg-pf 585 white diffused yellow green565 orange emitted 635 lens material part no color viewing angle 2 1/2 (deg) 65 2.6 1.7 35 45 1.7 304565 2.6 1.7 45 min. 2.6 3045 min. max. typ. 44 44 40 forward voltage @20ma(v) spectral halfwidth nm luminous intensity @10ma(mcd) 20 ma 30 forward current i f 30 10 120 100 operating temperature storage temperature tstg t opr power dissipation peak forward current duty 1/10@10khz reverse current @5v pd ir i fp -40 ~ +100 -40 ~ +85 ma mw a 60100 80120 ligitek electronics co.,ltd. property of ligitek only e absolute maximum ratings at ta=25 parameter symbol 2/7 page unit y ratings g gaasp/gap part no. la38b-86/eyg-pf
typical electro-optical characteristics curve page ligitek electronics co.,ltd. property of ligitek only 3/7 3.0 2.5 1.5 1.0 0.5 0.0 2.0 fig.4 relative intensity vs. temperature r e l a t i v e i n t e n s i t y @ 2 0 m a 600 wavelength (nm) 550 0.0 0.5 650700750 ambient temperature( ) fig.5 relative intensity vs. wavelength fig.3 forward voltage vs. temperature f o r w a r d v o l t a g e @ 2 0 m a n o r m a l i z e @ 2 5 1.0 -40 0.8 -20 1.0 0.9 1.1 1.2 r e l a t i v e i n t e n s i t y @ 2 0 m a n o r m a l i z e @ 2 5 20 060 40100 80 100 20 ambient temperature( ) -20 -40 060 4080 3.0 2.5 2.0 1.5 1.0 0.5 0.0 fig.2 relative intensity vs. forward current 2.0 fig.1 forward current vs. forward voltage forward voltage(v) 100 f o r w a r d c u r r e n t ( m a ) 1.0 0.1 1.0 10 e chip 1000 r e l a t i v e i n t e n s i t y n o r m a l i z e @ 2 0 m a 3.04.05.01000 forward current(ma) 1.010100 25% 100%50% 75% -60 -30 50% 25% 0100% 75% 60 0 30 fig.6 directive radiation part no. la38b-86/eyg-pf
3.0 2.5 1.5 1.0 0.5 0.0 2.0 fig.4 relative intensity vs. temperature 1.0 r e l a t i v e i n t e n s i t y @ 2 0 m a 550 wavelength (nm) 500 0.0 0.5 600650700 ambient temperature( ) fig.5 relative intensity vs. wavelength fig.3 forward voltage vs. temperature f o r w a r d v o l t a g e @ 2 0 m a n o r m a l i z e @ 2 5 -40 0.8 -20 1.0 0.9 1.1 1.2 r e l a t i v e i n t e n s i t y @ 2 0 m a n o r m a l i z e @ 2 5 40 20 060100 80 ambient temperature( ) -40-20 02060 40100 80 3.0 2.5 2.0 1.5 1.0 0.5 0.0 ligitek electronics co.,ltd. property of ligitek only fig.2 relative intensity vs. forward current typical electro-optical characteristics curve 2.0 fig.1 forward current vs. forward voltage forward voltage(v) 100 f o r w a r d c u r r e n t ( m a ) 1.0 0.1 10 1.0 y chip 1000 r e l a t i v e i n t e n s i t y n o r m a l i z e @ 2 0 m a 3.04.05.0 4/7 page forward current(ma) 1.0101001000 -60 60 75% 100% 50%25% 50% 025%75%100% -30 30 0 fig.6 directive radiation part no. la38b-86/eyg-pf
fig.3 forward voltage vs. temperature fig.5 relative intensity vs. wavelength ambient temperature( ) r e l a t i v e i n t e n s i t y @ 2 0 m a wavelength (nm) f o r w a r d v o l t a g e @ 2 0 m a n o r m a l i z e @ 2 5 fig.4 relative intensity vs. temperature ambient temperature( ) r e l a t i v e i n t e n s i t y @ 2 0 m a n o r m a l i z e @ 2 5 forward voltage(v) fig.1 forward current vs. forward voltage f o r w a r d c u r r e n t ( m a ) forward current(ma) fig.2 relative intensity vs. forward current r e l a t i v e i n t e n s i t y n o r m a l i z e @ 2 0 m a 1.0 0.1 1.0 10 100 1000 1.0101001000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -40-200204060 1.0 1.1 1.2 500550600650 0.0 0.5 1.0 2.03.04.05.0 80100 0.8 0.9 -20 -40 40 20 080100 60 2.0 0.0 0.5 1.0 1.5 2.5 3.0 3.5 g chip ligitek electronics co.,ltd. property of ligitek only typical electro-optical characteristics curve page5/7 30 75% 100% -60 25% 50%25% 050% -30 0 fig.6 directive radiation 100% 75% 60 part no. la38b-86/eyg-pf
note:1.wave solder should not be made more than one time. 2.you can just only select one of the soldering conditions as above. 2 /sec max 60 seconds max 25 0 0 preheat 120 temp( c) 260 5 /sec max 50 100 time(sec) 150 260 c3sec max soldering condition(pb-free) 1.iron: soldering iron:30w max temperature 350 c max soldering time:3 seconds max(one time only) distance:2mm min(from solder joint to case) dip soldering preheat: 120 c max preheat time: 60seconds max ramp-up 2 c/sec(max) ramp-down:-5 c/sec(max) solder bath:260 c max dipping time:3 seconds max distance:2mm min(from solder joint to case) 2.wave soldering profile ligitek electronics co.,ltd. property of ligitek only page 6/7 part no. la38b-86/eyg-pf
solderability test solder resistance test thermal shock test high temperature high humidity test reliability test: low temperature storage test high temperature storage test test item operating life test this test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. mil-std-202: 210a mil-std-750: 2031 jis c 7021: a-1 this test intended to see soldering well performed or not. 1.t.sol=230 5 2.dwell time=5 1sec 1.t.sol=260 5 2.dwell time= 10 1sec. mil-std-202: 208d mil-std-750: 2026 mil-std-883: 2003 jis c 7021: a-2 the purpose of this is the resistance of the device which is laid under condition of low temperature for hours. the purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. the purpose of this test is the resistance of the device under tropical for hours. 1.ta=105 5 &-40 5 (10min) (10min) 2.total 10 cycles 1.ta=65 5 2.rh=90%~95% 3.t=240hrs 2hrs mil-std-202: 107d mil-std-750: 1051 mil-std-883: 1011 mil-std-202:103b jis c 7021: b-11 this test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. the purpose of this is the resistance of the device which is laid under condition of high temperature for hours. 1.ta=105 5 2.t=1000 hrs (-24hrs, +72hrs) 1.ta=-40 5 2.t=1000 hrs (-24hrs, +72hrs) 1.under room temperature 2.if=20ma 3.t=1000 hrs (-24hrs, +72hrs) mil-std-883:1008 jis c 7021: b-10 jis c 7021: b-12 mil-std-750: 1026 mil-std-883: 1005 jis c 7021: b-1 page 7/7 test condition description reference standard ligitek electronics co.,ltd. property of ligitek only part no. la38b-86/eyg-pf
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